Lead halide perovskites: crystal-liquid duality, phonon glass electron crystals, and large polaron formation. Contacting organic molecules by metal evaporation. Haick, H., Ambrico, M., Ghabboun, J., Ligonzo, T. The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers). Spicer, W., Chye, P., Garner, C., Lindau, I. Highly narrowband perovskite single-crystal photodetectors enabled by surface-charge recombination. Perovskite light-emitting diodes based on spontaneously formed submicrometre-scale structures. High-efficiency solution-processed perovskite solar cells with millimeter-scale grains. Our results lay the foundation for exploring new physics in this class of ‘soft-lattice’ materials. Furthermore, magnetotransport studies reveal a quantum-interference-induced weak localization behaviour with a phase coherence length up to 49 nm at 3.5 K. We report a Hall mobility exceeding 2,000 cm 2 V –1 s –1 at around 80 K, an ultralow bimolecular recombination coefficient of 3.5 × 10 –15 cm 3 s –1 and a photocurrent gain >10 6 in the perovskite thin films. Compared to the deposited contacts, our van der Waals contacts exhibit two to three orders of magnitude lower contact resistance, enabling systematic transport studies in a wide temperature range. Here we report a van der Waals integration approach for creating high-performance contacts on monocrystalline halide perovskite thin films with minimum interfacial damage and an atomically clean interface. However, their charge transport properties remain elusive, plagued by the issues of excessive contact resistance and large hysteresis in ambient conditions. These results reveal the quantum transport properties of Ta 1.04Ru 0.78Te 4 single crystals, which can be considered in the future device design.Lead halide perovskites have attracted increasing interest for their exciting potential in diverse optoelectronic devices. A small phase coherence length implies weakened screening and enhancing electron–electron interaction effects. At low temperature, the dip-like magnetoresistance at low field strengths suggests a weak antilocalization in the Ta 1.04Ru 0.78Te 4 single crystal. A lack of overlap of Kohler's plot curves at different temperature implies the violation of Kohler's rule. The Ta 1.04Ru 0.78Te 4 single crystals displayed small and positive magnetoresistance, and the 3 K magnetoresistance at 9 T was about 15%. The weakly nonlinear Hall resistivity with a positive slope suggests a p-type and multiband feature for bulk Ta 1.04Ru 0.78Te 4 the electron and hole concentrations and mobilities of the samples are very close to each other and have the same order of magnitude. The magnetic field enhances the upturn feature. The samples showed a metallic behavior with a resistivity upturn below ∼8.6 K, which may be the result of quantum correction to the resistivity. Here, we report the transport properties of bulk Ta 1.04Ru 0.78Te 4 single crystals. However, the coexistence of the low-temperature resistivity upturn and weak antilocalization from quantum corrections in bulk single crystals is seldom reported. A resistivity upturn at low temperature or weak antilocalization due to quantum corrections has been often observed experimentally. Quantum corrections to conductivity, which reflect charge carriers' quantum behavior, are a significant topic in condensed state physics and device design.

Weak antilocalization phase coherence